GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates
- 21 September 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (12) , 886-888
- https://doi.org/10.1063/1.98844
Abstract
The GaAs‐GaAlAs graded‐index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO2‐masked GaAs (100) substrate. The stripe windows on the SiO2 mask were 10 μm in width and were oriented along [011̄] direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95:1. Both the longitudinal mode and the single‐lobe far‐field pattern were stable up to 4Ith.Keywords
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