Porous GaAs formed by a two-step anodization process
- 1 August 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 179 (3-4) , 661-664
- https://doi.org/10.1016/s0022-0248(97)00196-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Visible photoluminescence from porous GaAsApplied Physics Letters, 1996
- Direct observation of porous SiC formed by anodization in HFApplied Physics Letters, 1993
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- X-ray double crystal diffraction study of porous siliconApplied Physics Letters, 1985