Precise melt composition control for LEC GaAs
- 2 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (3) , 469-471
- https://doi.org/10.1016/0022-0248(87)90478-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Stoichiometry of undoped LEC GaAsJournal of Crystal Growth, 1986
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAsJapanese Journal of Applied Physics, 1983
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982