Modelling of wafer heating during rapid thermal processing
- 1 February 1990
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 50 (2) , 141-150
- https://doi.org/10.1007/bf00343409
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Temperature transients in heavily doped and undoped silicon using rapid thermal annealingJournal of Applied Physics, 1985
- Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effectsJournal of Applied Physics, 1984
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980