Width of the dislocation energy band in germanium
- 16 November 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 38 (1) , 109-113
- https://doi.org/10.1002/pssa.2210380112
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Capacitance measurements as a new tool to investigate the electronic states of dislocations in semiconductorsPhysica Status Solidi (a), 1976
- Edge dislocation behaviour in Au–n-silicon diodesPhysica Status Solidi (a), 1975
- Recombination of charge carriers at dislocations in germaniumPhysica Status Solidi (a), 1973
- On the electronic states at dislocations in germaniumPhysica Status Solidi (a), 1972
- Leakage currents of n+p silicon diodes with different amounts of dislocationsSolid-State Electronics, 1969
- Electrical Properties of Dislocations in Ge and SiPhysica Status Solidi (b), 1969
- Electron and Phonon Bound States and Scattering Resonances for Extended Defects in CrystalsPhysical Review B, 1967
- Current–Voltage Characteristics of Plastically Deformed Germanium P–N JunctionsJournal of the Physics Society Japan, 1961
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952