III-V interband 5.2 μm laser operating at 185 K
- 29 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (26) , 3764-3766
- https://doi.org/10.1063/1.120499
Abstract
We report the operation of a III-V interband laser at a wavelength beyond 5 μm and temperatures above 90 K. The active region consists of a strain compensated broken gap four layer superlattice of InAs/Ga0.6In0.4Sb/InAs/Al0.3Ga0.42In0.28As0.5Sb0.5 grown by molecular beam epitaxy. The maximum operating temperature under 2.01 μm pulsed optical excitation was 185 K at a wavelength of 5.2 μm. The peak pump intensity at the 80 K threshold was 62 kW/cm2, and the characteristic temperature (T0) of the threshold intensity was 37 K. This T0 is comparable to the best observed values for 3–4.5 μm lasers based on the InAs/GaInSb material system.Keywords
This publication has 18 references indexed in Scilit:
- Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regionsApplied Physics Letters, 1997
- High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum wellApplied Physics Letters, 1996
- Room temperature mid-infrared quantum cascade lasersElectronics Letters, 1996
- Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μmApplied Physics Letters, 1996
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasersApplied Physics Letters, 1995
- Demonstration of 3.5 µm Ga 1-
x
In
x
Sb/InAssuperlattice diodelaserElectronics Letters, 1995
- Quantum Cascade LaserScience, 1994