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  3. Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
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  5. 10.4028/www.scientific.net/msf.10-12.527
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  3. Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
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  5. 10.4028/www.scientific.net/msf.10-12.527

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