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Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
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Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
PH
Pekka J. Hautojärvi
Pekka J. Hautojärvi
HH
H. Huomo
H. Huomo
JL
J. Lahtinen
J. Lahtinen
JM
J. Mäkinen
J. Mäkinen
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1 January 1986
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 10-12
,
527-532
https://doi.org/10.4028/www.scientific.net/msf.10-12.527
Abstract
No abstract available
Cited
Cited by 3 articles
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