Low temperature growth of AlN films by microwave plasma chemical vapour deposition using an AlBr3-H2-N2 gas system
- 1 July 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 202 (2) , 333-344
- https://doi.org/10.1016/0040-6090(91)90104-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVDJapanese Journal of Applied Physics, 1990
- Optical emission characterization of a divergent magnetic field electron cyclotron resonance sourceJournal of Vacuum Science & Technology A, 1989
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium AlloysJapanese Journal of Applied Physics, 1989
- Plasma-enhanced chemical vapour deposition of AlN coatings on graphite substratesThin Solid Films, 1987
- Rapid Growth of AlN Films by Particle-Precipitation Aided Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- Plasma-induced and plasma-assisted chemical vapour depositionThin Solid Films, 1985
- Diagnostics and modelling of a methane plasma used in the chemical vapour deposition of amorphous carbon filmsJournal of Physics D: Applied Physics, 1984
- Plasma-assisted deposition processes: Theory, mechanisms and applicationsThin Solid Films, 1983
- Some Properties of Aluminum NitrideJournal of the Electrochemical Society, 1960
- Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—IJournal of Inorganic and Nuclear Chemistry, 1959