Study on Reliability of Low Noise GaAs MESFETs
- 1 October 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 331-335
- https://doi.org/10.1109/euma.1979.332724
Abstract
Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.Keywords
This publication has 3 references indexed in Scilit:
- Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structureIEEE Transactions on Electron Devices, 1978
- Graded channel FET's: Improved linearity and noise figureIEEE Transactions on Electron Devices, 1978
- Reliability Study of GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1976