Molecular Dynamics studies of Dislocations in SI
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The mobility of dislocations in a model Silicon lattice is examined at an atomistic level using molecular dynamics. Straight and double-kinked 30° and 90° partial dislocation glide-set dipoles are modelled in a strain-free environment: reconstruction and antiphase defects are found to be present for 30° partial dislocations. The effects of applied shear strains and of temperatures up to the melting point are considered.Keywords
This publication has 3 references indexed in Scilit:
- Atomic structure of dislocations and dipoles in siliconPhilosophical Magazine A, 1987
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motionPhilosophical Magazine Part B, 1980