Optically active hydrogen dimers in crystalline silicon

15 December 1997

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 56 (24) , R15517-R15520
https://doi.org/10.1103/physrevb.56.r15517

Abstract

We report the effects of uniaxial stress and magnetic-field perturbations and of H-D isotope substitution on luminescence at 1.151 and 1.138 eV in crystalline silicon. The two centers responsible for these luminescence systems are shown to have symmetry and atomic compositions similar to those predicted for hydrogen dimers. The centers create acceptor (-/0) levels near the conduction-band minima and are paramagnetically inactive in their neutral states. The mechanism of formation of the defects is discussed.

Keywords

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