Low-voltage 0.1 μm organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography
- 16 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (7) , 1010-1012
- https://doi.org/10.1063/1.124581
Abstract
This letter describes the combined use of a form of near-field photolithography that relies on a conformable phase masks with microcontact printing and shadow masking for low-cost fabrication of organic transistors and simple complementary inverter circuits with critical dimensions of ∼0.1 μm. The good performance of the devices and their low-voltage operation make them and the fabrication procedures potentially attractive for many applications.Keywords
This publication has 15 references indexed in Scilit:
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Organic smart pixelsApplied Physics Letters, 1998
- Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase maskJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- High-Performance Plastic Transistors Fabricated by Printing TechniquesChemistry of Materials, 1997
- Using an elastomeric phase mask for sub-100 nm photolithography in the optical near fieldApplied Physics Letters, 1997
- Logic Gates Made from Polymer Transistors and Their Use in Ring OscillatorsScience, 1995
- Polymer microstructures formed by moulding in capillariesNature, 1995
- Organic Transistors: Two-Dimensional Transport and Improved Electrical CharacteristicsScience, 1995
- Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ‘‘ink’’ followed by chemical etchingApplied Physics Letters, 1993
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974