A thermal desorption investigation of arsine chemisorption on Ga-rich and As-rich GaAs(100) surfaces
- 15 November 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 278 (3) , 317-325
- https://doi.org/10.1016/0039-6028(92)90668-v
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): Implication for atomic layer epitaxyApplied Physics Letters, 1992
- Atomic Layer Epitaxy of III-V Electronic MaterialsAnnual Review of Materials Science, 1991
- Chemisorption and decomposition of trimethylgallium on GaAs(100)Surface Science, 1990
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfacesJournal of Vacuum Science & Technology B, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Metal-organic vapor phase epitaxy of compound semiconductorsMaterials Science Reports, 1987
- Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBESurface Science, 1980
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978