Numerical simulation of non-homogeneous submicron semiconductor devices by a deterministic particle method

This publication has 21 references indexed in Scilit:

• Improved balance equations for modeling non-stationary transport and the electron distribution function in GaAs
  Solid-State Electronics, 1992
• Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
  IEEE Transactions on Electron Devices, 1991
• A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs
  Solid-State Electronics, 1990
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
  COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1986
• Ballistic electrons in a submicron structure: The distribution function and two valley effects
  Physica B+C, 1985
• Exact linear admittance ofn+-n-n+semiconductor structures
  Physical Review B, 1985
• Hot electrons in one dimension
  Journal of Applied Physics, 1985
• Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects
  Physical Review B, 1984
• Diffusion effects and "Ballistic transport"
  IEEE Transactions on Electron Devices, 1981
• Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
  IEEE Transactions on Electron Devices, 1979