Stability of C54 titanium germanosilicide on a silicon-germanium alloy substrate
- 15 May 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (10) , 5107-5114
- https://doi.org/10.1063/1.359321
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Kinetic mechanisms of theC49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transitionPhysical Review B, 1994
- Silicides for integrated circuits: TiSi2 CoSi2Materials Science and Engineering: R: Reports, 1993
- Phase transitions during solid-state formation of cobalt germanide by rapid thermal annealingJournal of Applied Physics, 1993
- Nucleation and growth in the initial stage of metastable titanium disilicide formationJournal of Applied Physics, 1993
- Morphology and phase stability of TiSi2 on SiJournal of Applied Physics, 1992
- PMOS transistors in LPCVD polycrystalline silicon-germanium filmsIEEE Electron Device Letters, 1991
- Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristicsIEEE Electron Device Letters, 1991
- Surface morphology of TiSi2 on siliconThin Solid Films, 1990
- Nucleation and growth in the reaction of titanium with germanium and some silicon-germanium alloysApplied Surface Science, 1989
- Reaction of titanium with germanium and silicon-germanium alloysApplied Physics Letters, 1989