PMOS transistors in LPCVD polycrystalline silicon-germanium films
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (11) , 584-586
- https://doi.org/10.1109/55.119205
Abstract
P-channel MOS thin-film transistors (TFTs) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature (<or=600 degrees C) process or a high-temperature (up to 950 degrees C) process. Poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times as compared to a poly-Si TFT technology. The devices fabricated show good transistor characteristics after hydrogenation to reduce the number of electrically active traps in their active channel region.Keywords
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