First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
- 12 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (19) , 1267-1269
- https://doi.org/10.1063/1.96999
Abstract
We report the first observation of a two‐dimensional electron gas from Shubnikov–de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular‐dependent Shubnikov–de Haas measurements confirm two dimensionality of the system. Low‐temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm−2.Keywords
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