Electrical and optical properties of Si- and Sn-doped InxGa1−xAs (x≂0.53) grown by molecular beam epitaxy
- 15 January 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (2) , 598-600
- https://doi.org/10.1063/1.333072
Abstract
This communication reports the majority‐carrier properties and room‐temperature photoluminescence of InxGa1−xAs (x≂0.53) doped with Si and Sn, grown on InP substrates by molecular beam epitaxy. The peak doping levels attainable with Si and Sn are established, and comparison is made with dopant behavior in GaAs. The effects of Si‐doping level on photoluminescent yield are reported.This publication has 10 references indexed in Scilit:
- Si incorporation in AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Nucleation effects during MBE growth of Sn-Doped GaAsApplied Physics A, 1982
- Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPEJournal of Crystal Growth, 1982
- Optical quality GaInAs grown by molecular beam epitaxyJournal of Electronic Materials, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- Tin doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular-beam epitaxyJournal of Applied Physics, 1981
- The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxyJournal of Crystal Growth, 1981
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- Growth and characterization of MO/VPE double-heterojunction lasersIEEE Journal of Quantum Electronics, 1979