High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 2028-2043
- https://doi.org/10.1109/3.234466
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Filament formation in a tapered GaAlAs optical amplifierApplied Physics Letters, 1993
- 1.1 W CW, diffraction-limited operation of a monolithically integrated flared-amplifier master oscillator power amplifierElectronics Letters, 1992
- Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasersApplied Physics Letters, 1992
- Technique for measuring facet reflectivity and effective index of laser diode amplifiersElectronics Letters, 1991
- Analysis of monolithic integrated master oscillator power amplifiersIEEE Journal of Quantum Electronics, 1991
- Amplified spontaneous emission effects in semiconductor laser amplifiersIEEE Journal of Quantum Electronics, 1990
- 76 W cw monolithic laser diode arraysApplied Physics Letters, 1989
- GaAs laser amplifiersIEEE Journal of Quantum Electronics, 1968
- Saturation Effects in High-Gain LasersJournal of Applied Physics, 1965
- SMALL-SIGNAL AMPLIFICATION IN GaAs LASERSApplied Physics Letters, 1964