Light-Induced Mobility Transition in Silicon
- 11 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (19) , 1992-1995
- https://doi.org/10.1103/physrevlett.58.1992
Abstract
A very sharp, reversible change in magnitude of the electron mobility is detected by photo-Hall effect in inhomogeneous, oxygen-doped silicon specimens. The transition temperature rises with increasing illumination flux. The light creates carriers, which neutralize charged impurities and hence reduce potential fluctuations and raise mobility.Keywords
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