Performance characteristics of vertical-cavitysemiconductor laser amplifiers
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 342-343
- https://doi.org/10.1049/el:19960236
Abstract
The static and dynamic amplification of an external beam in a vertical-cavity surface emitting laser structure is demonstrated experimentally. A high gain of 20 dB and a fast response of 60 ps, as well as a narrow amplification bandwidth, make the device very interesting for active optical filtering and switching.Keywords
This publication has 5 references indexed in Scilit:
- Optimization of planar Be-doped InGaAs VCSEL's with two-sided outputIEEE Photonics Technology Letters, 1995
- Performance predictions for vertical-cavity semiconductor laser amplifiersIEEE Journal of Quantum Electronics, 1994
- Tunable extremely low threshold vertical-cavity laser diodesIEEE Photonics Technology Letters, 1993
- Vertical microcavity optical amplifying switchElectronics Letters, 1993
- GaAlAs/GaAs active filter based on vertical cavity surface emitting laserElectronics Letters, 1991