Temperature dependence of the cyclotron resonance linewidth in a GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As heterostructure

The temperature dependence of the cyclotron resonance linewidth (CRLW) in a GaAs-${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As heterostructure is investigated theoretically. The contributions to the CRLW due to the coupling of electrons with (1) longitudinal-optical (LO) phonons, (2) deformation-potential–acoustic phonons, and (3) piezoelectric-acoustic phonons are considered. Our calculations are compared with the experimental data, and a qualitative agreement is found over the temperature range T=4–300 K. At room temperature the dominant contribution to the CRLW is found to come from the electron LO-photon scattering, but the electron deformation-potential–acoustic-phonon scattering is not negligible.