A thermal-melting-model calculation of pulsed laser annealing of GaAs
- 1 June 1981
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 83 (7) , 367-370
- https://doi.org/10.1016/0375-9601(81)90164-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Laser-irradiation effects on unencapsulated GaAs studied by capacitance spectroscopyApplied Physics Letters, 1979
- Study of surface crystallinity and stoichiometry of laser-annealed GaAs using time-resolved reflectivity and channelingApplied Physics Letters, 1979
- Laser-induced recrystallization and damage in GaAsApplied Physics Letters, 1979
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967