Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductors

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Abstract
Ion implantation damage has been used as a mask for patterning III‐V semiconductors by photoelectrochemical etching. The damage inhibits etching and the optical absorption of the semiconductor prevents light from penetrating through the damaged layer. Patterns of ion implantation damage have been produced on the surface of InP, InGaAs, and InGaAsP by implantation of 50 and 150‐keV Be+ ions through a photoresist mask and with a focused beam of 20‐keV Ga+ ions. Subsequent photoelectrochemical etching produces surface relief features corresponding to the damage pattern. The effect of the electrolyte and the spectral composition of the light on the resolution are described. Micron size features have been delineated and the technique may be preferable to alternate masking methods (metallization or projection) in certain applications.