I-V characteristics of MOS capacitors with polycrystalline silicon field plates
- 1 December 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (12) , 5041-5044
- https://doi.org/10.1063/1.1661066
Abstract
The I‐V characteristics of MOS capacitors utilizing polycrystalline p‐type silicon field plates were investigated. It was found that sizable current flow is observable in both directions under pulsed dc conditions at voltages much below those at which current flows under applied dc. This suggests that the polycrystalline silicon film can be driven into avalanche and thus inject electrons into the oxide as well as the single‐crystal Si wafer. Charge trapping during passage of avalanche injected currents was observed to occur principally at the silicon/oxide interfaces. The rate of trapping depended strongly on the boron content of the oxide.This publication has 4 references indexed in Scilit:
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Avalanche Injection of Electrons into Insulating SiO2 Using MOS StructuresJournal of Applied Physics, 1970
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969