High power SCH-SQW InGaAsP/GaAs laser diodes without DLD-induced sudden mode failures
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 238-239
- https://doi.org/10.1109/islc.1990.764509
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-power (1 W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (x = 0.8 μm) separate-confinement single-quantum-well broad-area lasersElectronics Letters, 1989
- Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxyJournal of Applied Physics, 1985
- Nature of dark defects revealed in InGaAsP/InP double heterostructure light emitting diodes aged at room temperatureJournal of Applied Physics, 1982