Strain-induced metal-insulator transition of the Ge(111) surface
- 15 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (6) , 4421-4423
- https://doi.org/10.1103/physrevb.33.4421
Abstract
The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.Keywords
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