Temperature distribution along the striped active region in high-power GaAlAs visible lasers
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (3) , 1124-1128
- https://doi.org/10.1063/1.336125
Abstract
Catastrophic degradation related to local heating in GaAlAs visible lasers occasionally occurs under relatively low optical output power. To develop highly reliable lasers, we used laser Raman spectroscope with an argon ion laser focused at about 1 μm≂ to evaluate the local operating temperature rise not only at the facet surface, but also along the striped active region. The local operating temperature rise in the vicinity of the facet’s active region increased exponentially up to 200 °C when the optical output power was 30 mW/facet. This high temperature causes the rapid formation of a dark region and final catastrophic degradation. The calculated temperature rise along the striped active region is about one-half of that of the facet. The internal operating temperature is far higher than the average temperature measured by the thermal resistance method, which is considered to be a large influence on the lifetime and activation energy of lasers in practical applications.This publication has 18 references indexed in Scilit:
- High-power aging test on 1.3 μm DC-PBH lasers with reflective coated mirrorElectronics Letters, 1983
- A high-power, single-mode laser with twin-ridge-substrate structureApplied Physics Letters, 1983
- One watt CW visible single-quantum-well lasersElectronics Letters, 1983
- Continuous wave high-power, high-temperature semiconductor laser phase-locked arraysApplied Physics Letters, 1982
- Terraced-heterostructure large-optical-cavity AlGaAs diode laser: A new type of high-power cw single-mode deviceApplied Physics Letters, 1982
- Large optical cavity AlGaAs buried heterostructure window lasersApplied Physics Letters, 1982
- Catastrophic damage of AlxGa1−xAs double-heterostructure laser materialJournal of Applied Physics, 1979
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Semiconductor lasers with a thin active layer (>01 μm) for optical communicationsApplied Optics, 1978
- Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak powerJournal of Applied Physics, 1976