Picosecond YAG laser photoablation of amorphous silicon
- 1 December 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 46 (1-4) , 239-244
- https://doi.org/10.1016/0169-4332(90)90150-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Generation of high-energy atomic beams in laser-superconducting target interactionsApplied Physics Letters, 1989
- Plasma emission from laser ablation of the high-temperature superconductor YBa2Cu3O7Applied Physics Letters, 1988
- Photoinduced deposition of thin filmsMaterials Science Reports, 1987
- Laser-induced fluorescence studies of excimer laser ablation of Al2O3Applied Physics Letters, 1986
- Excimer laser photoablation of siliconJournal of Vacuum Science & Technology B, 1986
- Semiconductor cluster beams: One and two color ionization studies of Six and GexThe Journal of Chemical Physics, 1985
- Laser-induced plasmas for primary ion deposition of epitaxial Ge and Si filmsJournal of Vacuum Science & Technology B, 1985
- Temporally resolved imaging of silicon surfaces melted with intense picosecond 1-μm laser pulsesApplied Physics Letters, 1985