Deep-level distributions near p-n junctions in LPE GaAs
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1533-1537
- https://doi.org/10.1063/1.322820
Abstract
Deep‐level concentrations near p‐n junctions in LPE GaAs have been studied by the capacitance spectroscopy method. Two deep levels which are characteristic of LPE growth were measured within a few μm of the junction in both p+n and n+p diodes. The results indicate a uniform concentration of (6–9) ×1014 cm−3 for these levels in n‐type GaAs, but an extremely large variation from 3×1013 to 1015 cm−3 within 1 μm of the junction in p‐type GaAs. In addition some samples show Cu and Fe contamination in the low 1014‐cm−3 range due to diffusion from the LPE‐substrate interface.This publication has 11 references indexed in Scilit:
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