Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS
- 22 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 5.5.1-5.5.4
- https://doi.org/10.1109/iedm.2003.1269182
Abstract
200 GHz f/sub T/ SiGe HBTs and 80 nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve f/sub MAX/ of 227 GHz, corresponding to f/sub T/ of 201 GHz. Shrunk HBTs of A/sub E/=0.15/spl times/0.7 /spl mu/m/sup 2/ achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13 /spl mu/m platforms for large scaled RF ICs.Keywords
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