Interaction between boron and intrinsic defects in GaAs
- 15 May 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3856-3858
- https://doi.org/10.1063/1.332896
Abstract
A model has been developed to describe the interaction between boron and antisite defects in bulk grown undoped liquid uncapsulated Czochralski GaAs. This model helps explain the observed experimental behavior. The model indicates that the residual double acceptor can most likely be associated with either GaAs or BAs.This publication has 8 references indexed in Scilit:
- Boron impurity anti-site defects in p-type gallium-rich gallium arsenideJournal of Physics C: Solid State Physics, 1983
- Residual double acceptors in bulk GaAsApplied Physics Letters, 1983
- Evidence of the role of boron in undoped GaAs grown by liquid encapsulated CzochralskiApplied Physics Letters, 1982
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Infrared absorption of the 78-meV acceptor in GaAsApplied Physics Letters, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAsIEEE Electron Device Letters, 1980
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975