In Situ Transmission Electron Microscopy Observation of Single Crystallization of Filled Aluminum Interconnection
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10A) , L1260
- https://doi.org/10.1143/jjap.34.l1260
Abstract
In situ transmission electron microscopy (TEM) observation was carried out to clarify the aluminum single-crystallization mechanism. Aluminum filling into the grooves formed on an amorphous insulator completed at 903 K, which was 30 K below the melting point of pure aluminum. It was found that aluminum remained in the liquid state even at temperatures more than 80 K below its melting point. It is concluded that this supercooled aluminum state is essential to the fabrication of single-crystal aluminum lines, because this state enables fast solidification and suppresses polynucleations.Keywords
This publication has 6 references indexed in Scilit:
- Formation of Single-Crystal Al Interconnection by In Situ AnnealingJapanese Journal of Applied Physics, 1993
- Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse AnnealingJapanese Journal of Applied Physics, 1980
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- ELECTROMIGRATION IN SINGLE-CRYSTAL ALUMINUM FILMSApplied Physics Letters, 1970
- Formation of Crystal Nuclei in Liquid MetalsJournal of Applied Physics, 1950
- Rate of Nucleation in Condensed SystemsThe Journal of Chemical Physics, 1949