Photoacoustic Signals from Ion-Implanted and Epitaxially Grown Layers on Silicon Substrate
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3A) , L351-353
- https://doi.org/10.1143/jjap.33.l351
Abstract
A nonradiative transition in ion-implanted and epitaxially grown layers on a Si substrate was measured by a piezoelectric photoacoustic (PA) spectroscopy. It is considered that the observed peak at 1.07 eV is caused by a nonradiative recombination of optically excited electrons from boron acceptor levels. The decrease of the 1.07 eV peak intensity by ion implantation is considered to be due to the formation of a surface damaged layer with deep defect levels. The PA spectra of epitaxially grown samples are well explained by summing the spectra of p- and n-type bulk samples. The electric field at the p-n junction may be effective in the PA signal generation mechanism in the higher photon- energy region.Keywords
This publication has 3 references indexed in Scilit:
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