Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques
- 1 July 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (1) , 153-172
- https://doi.org/10.1002/1521-396x(199707)162:1<153::aid-pssa153>3.0.co;2-3
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Electrical properties of the titanium acceptor in silicon carbidePhysical Review B, 1997
- Identification of the neutralV4+impurity in cubic 3C-SiC by electron-spin resonance and optically detected magnetic resonancePhysical Review B, 1994
- Deep donor state of vanadium in cubic silicon carbide (3C-SiC)Applied Physics Letters, 1994
- Magnetic circular dichroism and site-selective optically detected magnetic resonance of the deep amphoteric vanadium impurity in 6H-SiCPhysical Review B, 1993
- Point defects in silicon carbidePhysica B: Condensed Matter, 1993
- Optically detected electron paramagnetic resonance of a vanadium impurity in 6H-silicon carbideSolid State Communications, 1993
- Electron spin resonance studies of transition metal deep level impurities in SiCMaterials Science and Engineering: B, 1992
- Transition Metals in Silicon Carbide (SiC): Vanadium and TitaniumMaterials Science Forum, 1992
- Optically detected magnetic resonance study of SiC:TiPhysical Review B, 1985
- Photoluminescence of Ti in four SiC polytypesPhysical Review B, 1974