Faster ESD device characterization with wafer-level HBM
- 1 March 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
HBM testers are tools for ESD product qualification whereas TLP testers are used for device characterization. The ability to extract TLP-like IV curves from an HBM system is demonstrated in this paper. Together with measurement results on wafer-level, the full methodology is presented and compared to standard 100 ns TLP measurements. The advantage of this methodology is that the quasi-static characteristic of a ESD protection device can be obtained much faster and with only one test procedure.Keywords
This publication has 3 references indexed in Scilit:
- Pitfalls when correlating TLP, HBM and MM testingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- ESD in Silicon Integrated CircuitsPublished by Wiley ,2002
- Does The Esd-failure Current Obtained By Transmissionline Pulsing Always Correlate To Human Body Model Tests?Published by Institute of Electrical and Electronics Engineers (IEEE) ,1997