Characteristics of metal/tunnel-oxide/N/P+ silicon switching devices—I
- 1 October 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (10) , 941-948
- https://doi.org/10.1016/0038-1101(81)90115-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Characteristics of three-terminal metal-tunnel if oxide-n/p+ devicesSolid-State Electronics, 1979
- Theory of switching in p-n-insulator (tunnel)-metal devices: Part I: Punchthrough modeSolid-State Electronics, 1979
- Steady-state characteristics of three terminal inversion-controlled switchesSolid-State Electronics, 1978
- Steady-state characteristics of two terminal inversion-controlled switchesSolid-State Electronics, 1978
- The characterisation of metal-thin insulator-n-p+ silicon switching devicesRevue de Physique Appliquée, 1978
- Experimental studies of switching in metal semi-insulating n-p+ silicon devicesSolid-State Electronics, 1977
- Theory of switching phenomena in metal/semi-insulator/n-p+ silicon devicesSolid-State Electronics, 1977