Study of the Electronic Structure of GaAs(100) Single Crystal Electrode/Electrolyte Interfaces by Electrochemical Tunneling Spectroscopy
- 1 February 1996
- journal article
- Published by Oxford University Press (OUP) in Bulletin of the Chemical Society of Japan
- Vol. 69 (2) , 275-288
- https://doi.org/10.1246/bcsj.69.275
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
- Tunneling spectroscopy of the Si(111)2 × 1 surfacePublished by Elsevier ,2002
- Scanning-Tunneling-Microscope Observation of the Abrikosov Flux Lattice and the Density of States near and inside a FluxoidPhysical Review Letters, 1989
- Transition from tunneling to point contact investigated by scanning tunneling microscopy and spectroscopySurface Science, 1987
- Spatial variation of the observed energy gap in granular superconducting NbN filmsApplied Physics Letters, 1987
- Properties of vacuum tunneling currents: Anomalous barrier heightsIBM Journal of Research and Development, 1986
- Theory of scanning tunneling microscopy and spectroscopy: Resolution, image and field states, and thin oxide layersIBM Journal of Research and Development, 1986
- Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy imagesPhysical Review B, 1986
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982