Diisopropylantimonyhydride (DIPSbH) for low temperature epitaxial growth of InSb
- 1 September 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 132 (3-4) , 371-376
- https://doi.org/10.1016/0022-0248(93)90061-z
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Tertiarybutyldimethylantimony: A new Sb source for low-temperature organometallic vapor phase epitaxial growth of InSbApplied Physics Letters, 1992
- Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °CJournal of Applied Physics, 1991
- The use of triisopropylantimony for the growth of InSb and GaSbJournal of Applied Physics, 1991
- Decomposition studies of triisopropylantimony and triallylantimonyJournal of Electronic Materials, 1991
- Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimonyApplied Physics Letters, 1991
- Decomposition mechanisms of trivinylantimony and reactions with trimethylgalliumChemistry of Materials, 1991
- Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld andApplied Physics Letters, 1990
- OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbxJournal of Crystal Growth, 1988
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Organometallic VPE Growth of InAs1-x-ySbxPy on InAsJapanese Journal of Applied Physics, 1981