Probing Pore Characteristics in Low-K Thin Films Using Positronium Annihilation Lifetime Spectroscopy
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Determination of pore-size distribution in low-dielectric thin filmsApplied Physics Letters, 2000
- Properties of nanoporous silica thin films determined by high-resolution x-ray reflectivity and small-angle neutron scatteringJournal of Applied Physics, 2000
- Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constantJournal of Applied Physics, 1999
- Extension of the Equation for the Annihilation Lifetime of ortho-Positronium at a Cavity Larger than 1 nm in RadiusThe Journal of Physical Chemistry B, 1999
- Positron annihilation in amine‐cured epoxy polymers—pressure dependenceJournal of Polymer Science Part B: Polymer Physics, 1990
- A constrained regularization method for inverting data represented by linear algebraic or integral equationsComputer Physics Communications, 1982
- The temperature dependence of positron lifetimes in solid pivalic acidChemical Physics, 1981
- Precision Measurement of the Decay Rate of Orthopositronium in SiPowdersPhysical Review Letters, 1976
- Positronium Annihilation in Molecular SubstancesThe Journal of Chemical Physics, 1972