Measurement of diagnostic x‐ray spectra using a silicon photodiode

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Abstract
Diagnostic x-ray spectra (66-103 kV, 1-2 mA) were measured without pinhole collimator or liquid nitrogen cooling by using a silicon p-i-n photodiode. An x-ray count rate was low (.apprx.400 photons/s) at distances of 2-3 m away from an x-ray target, because the i layer of the photodiode was very small (1.5 mm2 in area and 75 .mu.m in thickness). The junction reverse current of the photodiode was 50-70 pA at room temperature and energy resolution for 59.5-keV .gamma. rays was 2.0 keV (full width at half-maximum), which was limited by the electric noise of a preamplifier. Measured spectra were corrected for detector distortion. The correlated spectra were similar to those determined with a Ge detector. The i-layer thickness of the photodiode was an important parameter for the correction. In particular, when the thickness was thin, the fraction of photoelectron escape became large; this fraction was estimated analytically for various i-layer thicknesses. The angular dependence of the full-energy peak efficiency was measured; for the photons whose energies were above 17.8 keV the angular dependence was isotropic except for angles greater than 60.degree. off the photodiode axis. This method is therefore applicable to the measurement of scattered x rays.