Low resistance (~10 -6 Ωcm 2 )ohmic contact to n -GaAs processed at 175°C
- 22 June 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (13) , 1106-1108
- https://doi.org/10.1049/el:19950704
Abstract
A low resistance (10-6 Ωcm2) Au/Ge/Pd ohmic contact processed at 175°C has been developed to n-GaAs (n ≃ 1018 cm-3). The ohmic contact formation mechanism can be rationalised in terms of the solid phase regrowth (SPR) principle and the interdiffusion of Au and Ge.Keywords
This publication has 7 references indexed in Scilit:
- The Development of Solid Phase Regrowth on GaAs and its applicationsMRS Proceedings, 1993
- An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structuresJournal of Applied Physics, 1991
- The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAsJournal of Applied Physics, 1989
- Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phasesJournal of Materials Research, 1988
- Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of GeJournal of Applied Physics, 1987
- Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyApplied Physics Letters, 1985
- Contact degradation of GaAs transferred electron devicesNuclear Instruments and Methods, 1978