The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- 15 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (4) , 1621-1625
- https://doi.org/10.1063/1.342954
Abstract
The temperature dependence of the contact resistance of the Ge/Pd and Si/Pd metalization scheme on n-GaAs was investigated. These two contact systems are based on solid-phase reactions, thus leading to nonspiking ohmic contacts to n-GaAs. The experimental results show that the ohmic behavior is likely due to both a highly doped surface n+ region and/or a small barrier at the interface. The origin of this small barrier and nonlinear current-voltage characteristics for certain samples are also discussed.This publication has 17 references indexed in Scilit:
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