Beryllium and zinc behaviour in GaAs and GaAlAs for high concentration solar cells
- 1 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8) , 911-913
- https://doi.org/10.1016/0038-1101(80)90110-0
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Te and Ge — doping studies in Ga1−xAlxAsJournal of Electronic Materials, 1975
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958