Surface enrichment of copper due to keV Xe sputtering of an Al-Cu mixture
- 1 October 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (10) , 4500-4503
- https://doi.org/10.1063/1.322420
Abstract
A surface enrichment of Cu due to keV Xe sputtering of Al‐Cu mixtures has been observed by high‐energy He ion backscattering and by Auger electron spectroscopy. The complementary nature of these two methods provides information on the total Cu enrichment (4.5×1015/cm2) and depth of the altered layer (∼300 Å).This publication has 17 references indexed in Scilit:
- The sputtering of PtSi and NiSiNuclear Instruments and Methods, 1976
- On the role of recoil implantation in altering the stoichiometry of a bombarded solidNuclear Instruments and Methods, 1976
- High−spatial resolution Auger spectroscopy and Auger integration applicationsJournal of Vacuum Science and Technology, 1975
- Quantitative auger analysis of copper-nickel alloy surfaces after argon ion bombardmentSurface Science, 1973
- Measurements of the sputter rate of fused silica bombarded by argon ions of energy 12-32 keVJournal of Physics D: Applied Physics, 1973
- The sputtering of oxides part i: a survey of the experimental resultsRadiation Effects, 1973
- Formation of second phase particles in aluminum-copper alloy filmsThin Solid Films, 1972
- Auger spectra of copper-nickel alloysSurface Science, 1971
- Auger spectroscopy study on copper-nickel alloy surfaces related to the catalysisSurface Science, 1971
- Alloy Sputtering Studies with in situ Auger Electron SpectroscopyJournal of Vacuum Science and Technology, 1971