Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayer
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 107-111
- https://doi.org/10.1016/0022-0248(93)90587-m
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Research Foundation for the Electrotechnology of Chubu
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