Remote impurity scattering in heterojunctions
- 1 February 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (2) , 120-123
- https://doi.org/10.1088/0268-1242/3/2/008
Abstract
The commonly used formalism for the ionised remote impurity scattering of electrons in a 2D electron gas contains the following inconsistency. The potential of the donors (e.g. the Si donors in the AlGaAs in the case of a GaAs-AlGaAs heterojunction) is accounted for twice: first in the self-consistent calculation of the envelope function and secondly in the calculation of the scattering rate. Instead, only the scattering as due to the fluctuations in the average field of the donors should be accounted for. The authors have developed expressions for this scattering amplitude and have applied them to a few GaAs-AlGaAs samples with very high mobilities. These samples posed the problem of a serious underestimation of the experimental mobility by the theory. This problem now can be resolved and a better agreement between experiment and theory has been obtained.Keywords
This publication has 21 references indexed in Scilit:
- Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1Journal of Applied Physics, 1987
- Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structuresSuperlattices and Microstructures, 1986
- A New Approach to the Quantum Hall EffectEurophysics Letters, 1986
- High electron mobility transistorsSurface Science, 1986
- Self-consistent calculations on GaAs-AlxGa1-xAs heterojunctionsJournal of Physics C: Solid State Physics, 1985
- Selectively doped GaAs/N–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applicationsJournal of Vacuum Science & Technology B, 1985
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- Self-consistent variational calculations and alloy scattering in semiconductor heterojunctionsSurface Science, 1984
- Compositional and doping superlattices in III-V semiconductorsAdvances in Physics, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982