Gettering of metals by He induced voids in silicon
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2) , 249-252
- https://doi.org/10.1016/0168-583x(94)00493-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Infrared spectroscopy of chemically bonded hydrogen at voids and defects in siliconJournal of Applied Physics, 1993
- Helium desorption/permeation from bubbles in silicon: A novel method of void productionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987