Picosecond time evolution of free electron-hole pairs into excitons in GaAs quantum wells
- 15 August 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (7) , 4891-4897
- https://doi.org/10.1103/physrevb.54.4891
Abstract
We measure picosecond time resolved luminescence spectra in GaAs quantum wells using frequency upconversion luminescence spectroscopy. A careful line-shape analysis of the spectra is performed to separate the free exciton and free carrier related luminescence. From the time evolution of the free carrier luminescence, we deduce the characteristic time constant () for the bimolecular process of exciton formation by free electron-hole pairs. For an estimated initial carrier density of 4× , is found to be 50 ps. © 1996 The American Physical Society.
Keywords
This publication has 18 references indexed in Scilit:
- Dynamical equilibrium between excitons and free carriers in quantum wellsSolid State Communications, 1995
- Selective exciton formation in thin GaAs/As quantum wellsPhysical Review Letters, 1993
- Generation rate of 2D excitons in quantum wellsJournal of Luminescence, 1993
- Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlatticesAdvances in Physics, 1991
- Exciton dynamics in a GaAs quantum wellPhysical Review B, 1991
- Dynamics of exciton formation and relaxation in GaAs quantum wellsPhysical Review B, 1990
- Exciton dynamics in GaAs quantum wellsJournal of Luminescence, 1990
- Collision broadening of two-dimensional excitons in a GaAs single quantum wellPhysical Review B, 1989
- Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systemsSuperlattices and Microstructures, 1987
- Determination of Surface Impurity Concentration Profiles by Nuclear BackscatteringJournal of Applied Physics, 1971